Multiscale modeling and optimization of an atomic layer deposition process for nanomanufacturing applications
نویسنده
چکیده
A multiscale model of atomic layer deposition (ALD) inside a nanoporous material is developed in this paper. The overall model couples lattice Monte Carlo simulators describing molecular-scale growth of the ALD film to a continuum description of the precursor transport within the nanopore. The multiscale simulator is used to study how intra-pore precursor depletion leads to nonuniform ALD films and can be used to examine whether film properties, such as composition and surface roughness, are functions of position within the pore. The simulator developed in this study is used to optimize the film growth process by manipulating the precursor species exposure level to produce nearly perfectly uniform films within the nanopores.
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